PPMT2301 MOSFET. Datasheet pdf. Equivalent
Type Designator: PPMT2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 89 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT23
PPMT2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PPMT2301 Datasheet (PDF)
ppmt2301.pdf
PPMT2301P-Channel MOSFETDescription Trench Power LV MOSFET technology High Power and Current handing capability Low Gate ChargeMOSFET Product SummaryVDS(V) RDS(on)(m) ID(A)Top View90@VGS = -4.5V-20 -4.0135@VGS = -2.5VApplications PWM applications Load switch Circuit Diagram Power management2301Marking (Top View)Absolute maximum rating@25
ppmt20v4e.pdf
PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG1-20 0.037 @ V =-4.5V -4 GSS2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20VDSGate-Source Voltage V 10 V GSDrain Current Contin
ppmt20v3.pdf
PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTE
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