PPMT2301 MOSFET Datasheet: P-Ch, 20V, 4A. Full specification with pinout and replacement list

PPMT2301 Specs and Replacement

Type Designator: PPMT2301

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 89 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT23

PPMT2301 substitution

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PPMT2301 datasheet

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ppmt20v4e.pdf pdf_icon

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 -20 0.037 @ V =-4.5V -4 GS S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20V DS Gate-Source Voltage V 10 V GS Drain Current Contin... See More ⇒

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ppmt20v3.pdf pdf_icon

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTE... See More ⇒

Detailed specifications: PNM3FD201E0, PNM3FD20V1E, PNM523T30V01, PNM723T30V01, PNMT6N1, PNMT6N1-LB, PNMT6N2, PNMT8N1, EMB04N03H, PJ2301-AU, PJA3415AE, PJA3416AE, PJA3417, PJA3419, PJA3439, PJA3441, PJA3460