PPMT2301
MOSFET. Datasheet pdf. Equivalent
Type Designator: PPMT2301
Marking Code: 2301
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.3
nC
trⓘ - Rise Time: 54
nS
Cossⓘ -
Output Capacitance: 89
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
SOT23
PPMT2301
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PPMT2301
Datasheet (PDF)
..1. Size:1155K prisemi
ppmt2301.pdf
PPMT2301P-Channel MOSFETDescription Trench Power LV MOSFET technology High Power and Current handing capability Low Gate ChargeMOSFET Product SummaryVDS(V) RDS(on)(m) ID(A)Top View90@VGS = -4.5V-20 -4.0135@VGS = -2.5VApplications PWM applications Load switch Circuit Diagram Power management2301Marking (Top View)Absolute maximum rating@25
9.1. Size:225K prisemi
ppmt20v4e.pdf
PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG1-20 0.037 @ V =-4.5V -4 GSS2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20VDSGate-Source Voltage V 10 V GSDrain Current Contin
9.2. Size:109K prisemi
ppmt20v3.pdf
PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTE
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