PJA3439 Specs and Replacement
Type Designator: PJA3439
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT-23
PJA3439 substitution
- MOSFET ⓘ Cross-Reference Search
PJA3439 datasheet
pja3439.pdf
PPJA3439 60V P-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) Voltage -60 V Current -300mA Features RDS(ON) , VGS@-10V, ID@-500mA... See More ⇒
pja3430.pdf
PPJA3430 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit inch(mm) 20 V 2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@2.0A... See More ⇒
pja3434.pdf
PPJA3434 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit inch(mm) 20 V 750mA Voltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive.. Green molding compound as per IEC61249 Std. (Halo... See More ⇒
pja3431.pdf
PPJA3431 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit inch(mm) Voltage -20 V Current -1.5A Features RDS(ON) , VGS@-4.5V, ID@-1.5A... See More ⇒
Detailed specifications: PNMT6N2, PNMT8N1, PPMT2301, PJ2301-AU, PJA3415AE, PJA3416AE, PJA3417, PJA3419, IRFP064N, PJA3441, PJA3460, PJL9418, PJQ1900, PJQ5476AL, PJS6403, PJV1702, PJW4N06A
Keywords - PJA3439 MOSFET specs
PJA3439 cross reference
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PJA3439 substitution
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRLR7821CPBF | ZXMN6A08E6TA
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