PJQ1900 Specs and Replacement
Type Designator: PJQ1900
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: DFN3L
PJQ1900 substitution
- MOSFET ⓘ Cross-Reference Search
PJQ1900 datasheet
pjq1900.pdf
PPJQ1900 20V N-Channel Enhancement Mode MOSFET DFN 3L Unit inch(mm) 20 V 1.2 A Voltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data ... See More ⇒
Detailed specifications: PJA3415AE, PJA3416AE, PJA3417, PJA3419, PJA3439, PJA3441, PJA3460, PJL9418, IRF3205, PJQ5476AL, PJS6403, PJV1702, PJW4N06A, PJW4N06A-AU, PJW7N06A, PJX8808, PPJA3401A
Keywords - PJQ1900 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK3116-S | SM6028NSKP | 2SK1337
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