All MOSFET. PJQ1900 Datasheet

 

PJQ1900 Datasheet and Replacement


   Type Designator: PJQ1900
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: DFN3L
 

 PJQ1900 substitution

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PJQ1900 Datasheet (PDF)

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PJQ1900

PPJQ1900 20V N-Channel Enhancement Mode MOSFET DFN 3L Unit: inch(mm) 20 V 1.2 A Voltage Current Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data

Datasheet: PJA3415AE , PJA3416AE , PJA3417 , PJA3419 , PJA3439 , PJA3441 , PJA3460 , PJL9418 , IRF3205 , PJQ5476AL , PJS6403 , PJV1702 , PJW4N06A , PJW4N06A-AU , PJW7N06A , PJX8808 , PPJA3401A .

History: IXFT26N50 | IXFT23N80Q | 14N50G-TF1-T | IPB020N10N5 | CEN2321A | 14N50L-TA3-T | BRCS120P012MC

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