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STW55N10 Spec and Replacement


   Type Designator: STW55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO247

 STW55N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW55N10 Specs

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 sth55n10 sth55n10fi stw55n10.pdf pdf_icon

STW55N10

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STW55N10

STW55NE10 N - CHANNEL 100V - 0.021 - 55A - TO247 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STW55NE10 100 V ... See More ⇒

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STW55N10

STW55NM50N N-channel 500 V, 0.040 , 54 A, MDmesh II Power MOSFET TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max STW55NM50N 550 V ... See More ⇒

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STW55N10

STW55NM60ND N-channel 600 V - 0.047 - 51 A TO-247 FDmesh II Power MOSFET (with fast diode) Features VDSS RDS(on) Type ID (@TJmax) (max) STW55NM60ND 650 V ... See More ⇒

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Detailed specifications: STV8NA50 , STW12N60 , STW12NA50 , STW14N50 , STW15N50 , STW15NA50 , STW16N40 , STW20NA50 , IRF3205 , STW60N10 , STW75N06 , STW80N05 , STW8N80 , STW9NA60 , TA17632 , TA17650 , TA17656 .

History: RJK2009DPM

Keywords - STW55N10 MOSFET specs

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