STW55N10 Datasheet. Specs and Replacement

Type Designator: STW55N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO247

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STW55N10 substitution

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STW55N10 datasheet

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Detailed specifications: STV8NA50, STW12N60, STW12NA50, STW14N50, STW15N50, STW15NA50, STW16N40, STW20NA50, IRF3205, STW60N10, STW75N06, STW80N05, STW8N80, STW9NA60, TA17632, TA17650, TA17656

Keywords - STW55N10 MOSFET specs

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