All MOSFET. STW55N10 Datasheet

 

STW55N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 123 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO247

 STW55N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW55N10 Datasheet (PDF)

 ..1. Size:334K  1
 sth55n10 sth55n10fi stw55n10.pdf

STW55N10 STW55N10

 8.1. Size:268K  st
 stw55ne10.pdf

STW55N10 STW55N10

STW55NE10 N - CHANNEL 100V - 0.021 - 55A - TO247STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTW55NE10 100 V

 8.2. Size:350K  st
 stw55nm50n.pdf

STW55N10 STW55N10

STW55NM50NN-channel 500 V, 0.040 , 54 A, MDmesh II Power MOSFETTO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTW55NM50N 550 V

 8.3. Size:297K  st
 stw55nm60nd.pdf

STW55N10 STW55N10

STW55NM60NDN-channel 600 V - 0.047 - 51 A TO-247FDmesh II Power MOSFET (with fast diode)FeaturesVDSS RDS(on) Type ID(@TJmax) (max)STW55NM60ND 650 V

 8.4. Size:329K  st
 stw55nm60n.pdf

STW55N10 STW55N10

STW55NM60NN-channel 600 V, 0.047 , 51 A, MDmesh II Power MOSFETTO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTW55NM60N 650 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFF80N50Q2

 

 
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