PPJT7600 Spec and Replacement
Type Designator: PPJT7600
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25.7 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT-363
PPJT7600 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PPJT7600 Specs
ppjt7600.pdf
PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit inch(mm) Voltage 20 / -20V Current 1 / -0.7A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. ... See More ⇒
Detailed specifications: PJV1702 , PJW4N06A , PJW4N06A-AU , PJW7N06A , PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , IRLZ44N , PT4407 , PT4606 , PT4953 , PT8810 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
