PPJT7600 Datasheet. Specs and Replacement

Type Designator: PPJT7600  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.7 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-363

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PPJT7600 datasheet

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PPJT7600

PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit inch(mm) Voltage 20 / -20V Current 1 / -0.7A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. ... See More ⇒

Detailed specifications: PJV1702, PJW4N06A, PJW4N06A-AU, PJW7N06A, PJX8808, PPJA3401A, PPJD50N10AL, PPJQ5494, IRLZ44N, PT4407, PT4606, PT4953, PT8810, PT9435, PTD12N10, PTD15N10, PTD20N06

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.