All MOSFET. PPJT7600 Datasheet

 

PPJT7600 Datasheet and Replacement


   Type Designator: PPJT7600
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.7 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-363
 

 PPJT7600 substitution

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PPJT7600 Datasheet (PDF)

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PPJT7600

PPJT7600 20V Complementary Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm) Voltage 20 / -20V Current 1 / -0.7A Features Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std.

Datasheet: PJV1702 , PJW4N06A , PJW4N06A-AU , PJW7N06A , PJX8808 , PPJA3401A , PPJD50N10AL , PPJQ5494 , IRFP260N , PT4407 , PT4606 , PT4953 , PT8810 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 .

History: BSZ440N10NS3G | TW1504ESG | AP9565AGJ-HF

Keywords - PPJT7600 MOSFET datasheet

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