All MOSFET. PTD15N10 Datasheet

 

PTD15N10 Datasheet and Replacement


   Type Designator: PTD15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

 PTD15N10 substitution

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PTD15N10 Datasheet (PDF)

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PTD15N10

PTD15N10 100V/15A N-Channel Advanced Power MOSFETFeatures V DS 100 V N-Channel5V Logic Level Control R DS(on),typ@VGS=10V 78 m Enhancement mode R DS(on),typ@VGS=4.5V 82 m Very low on-resistance @ VGS=4.5 V I D 15 A Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant To-252Maximum ratings, at T j=25 C, unless otherw

Datasheet: PPJQ5494 , PPJT7600 , PT4407 , PT4606 , PT4953 , PT8810 , PT9435 , PTD12N10 , IRFB4227 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 .

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