All MOSFET. PTD15N10 Datasheet

 

PTD15N10 Datasheet and Replacement


   Type Designator: PTD15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
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PTD15N10 Datasheet (PDF)

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PTD15N10

PTD15N10 100V/15A N-Channel Advanced Power MOSFETFeatures V DS 100 V N-Channel5V Logic Level Control R DS(on),typ@VGS=10V 78 m Enhancement mode R DS(on),typ@VGS=4.5V 82 m Very low on-resistance @ VGS=4.5 V I D 15 A Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant To-252Maximum ratings, at T j=25 C, unless otherw

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: KP743V | CS20N50ANH | DMNH10H028SCT | IXTQ182N055T | MTN7002ZS3 | SSF6007 | IRLS4030

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