PTD15N10 Datasheet. Specs and Replacement

Type Designator: PTD15N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO252

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PTD15N10 datasheet

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PTD15N10

PTD15N10 100V/15A N-Channel Advanced Power MOSFET Features V DS 100 V N-Channel 5V Logic Level Control R DS(on),typ@VGS=10V 78 m Enhancement mode R DS(on),typ@VGS=4.5V 82 m Very low on-resistance @ VGS=4.5 V I D 15 A Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant To-252 Maximum ratings, at T j=25 C, unless otherw... See More ⇒

Detailed specifications: PPJQ5494, PPJT7600, PT4407, PT4606, PT4953, PT8810, PT9435, PTD12N10, 10N60, PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60, PTD50N06, PTD60N02, PTD7N65

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