PTD4080B Datasheet. Specs and Replacement

Type Designator: PTD4080B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO252

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PTD4080B datasheet

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PTD4080B

PTD4 08 0B 4 0V/60A N-Channel A dv anced Power MOSFET Features D RDS(on) (Typical 5.5m )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G S D G S TO-252 Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional... See More ⇒

Detailed specifications: PT4953, PT8810, PT9435, PTD12N10, PTD15N10, PTD20N06, PTD3004, PTD3006, P55NF06, PTD4N60, PTD50N06, PTD60N02, PTD7N65, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08

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