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PTD4080B Spec and Replacement


   Type Designator: PTD4080B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252

 PTD4080B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTD4080B Specs

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PTD4080B

PTD4 08 0B 4 0V/60A N-Channel A dv anced Power MOSFET Features D RDS(on) (Typical 5.5m )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G S D G S TO-252 Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional... See More ⇒

Detailed specifications: PT4953 , PT8810 , PT9435 , PTD12N10 , PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , P55NF06 , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 .

Keywords - PTD4080B MOSFET specs

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