All MOSFET. PTD4080B Datasheet

 

PTD4080B MOSFET. Datasheet pdf. Equivalent


   Type Designator: PTD4080B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 37 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252

 PTD4080B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PTD4080B Datasheet (PDF)

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 ptd4080b.pdf

PTD4080B PTD4080B

PTD4 08 0B4 0V/60A N-Channel A dv anced Power MOSFETFeaturesD RDS(on) (Typical 5.5m )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)GSDG STO-252Absolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional

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