All MOSFET. PTD7N65 Datasheet

 

PTD7N65 Datasheet and Replacement


   Type Designator: PTD7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO252
 

 PTD7N65 substitution

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PTD7N65 Datasheet (PDF)

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PTD7N65

PTD7 N6565 0V/7 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)TO252Absolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Datasheet: PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , 7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 .

History: TPD65R600M | IXTH1R8N220P3HV | NCE60H15T | FDU7030BL | DG840F | IXTY1N120P

Keywords - PTD7N65 MOSFET datasheet

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