PTD7N65 Spec and Replacement
Type Designator: PTD7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO252
PTD7N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTD7N65 Specs
ptd7n65.pdf
PTD7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) TO 252 Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the ... See More ⇒
Detailed specifications: PTD15N10 , PTD20N06 , PTD3004 , PTD3006 , PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , IRF630 , PTD80N06 , PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
