PTD7N65 Datasheet. Specs and Replacement
Type Designator: PTD7N65 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO252
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PTD7N65 substitution
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PTD7N65 datasheet
ptd7n65.pdf
PTD7 N65 65 0V/7 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) TO 252 Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the ... See More ⇒
Detailed specifications: PTD15N10, PTD20N06, PTD3004, PTD3006, PTD4080B, PTD4N60, PTD50N06, PTD60N02, IRF630, PTD80N06, PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, PTF13N50, PTF2N65, PTF5N65
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