PTD7N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTD7N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO252
PTD7N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTD7N65 Datasheet (PDF)
..1. Size:2318K cn puolop
ptd7n65.pdf
ptd7n65.pdf
PTD7 N6565 0V/7 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 1.0 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)TO252Absolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
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