STW75N06 Datasheet and Replacement
Type Designator: STW75N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 900 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO247
STW75N06 substitution
STW75N06 Datasheet (PDF)
stb75n20 stp75n20 stw75n20.pdf

STB75N20STP75N20 - STW75N20N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB75N20 200V
stw75n60m6.pdf

STW75N60M6DatasheetN-channel 600 V, 32 m typ., 72 A, MDmesh M6 Power MOSFET in a TO247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW75N60M6 600 V 36 m 72 A Reduced switching losses3 Lower RDS(on) per area vs previous generation21 Low gate input resistance 100% avalanche testedTO-247 Zener-protectedD(2, TAB)Applications Switchin
Datasheet: STW12NA50 , STW14N50 , STW15N50 , STW15NA50 , STW16N40 , STW20NA50 , STW55N10 , STW60N10 , 20N60 , STW80N05 , STW8N80 , STW9NA60 , TA17632 , TA17650 , TA17656 , TA75307 , TA75309 .
Keywords - STW75N06 MOSFET datasheet
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History: STW80N05 | STW16N40



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