PTY10HN08 Datasheet. Specs and Replacement
Type Designator: PTY10HN08 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263
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PTY10HN08 substitution
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PTY10HN08 datasheet
ptf10hn08 pty10hn08.pdf
PTF10HN08/PTY10HN08 80V/100A N-Chnnel MOSFET Features D 80V/100A RDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D % 100 Avalanche Tested Application G S G D S Power Supply TO-220F TO-263 DC-DC Converters UPS Battery Manageme e Absolute Maximum Ratings... See More ⇒
Detailed specifications: PTD4080B, PTD4N60, PTD50N06, PTD60N02, PTD7N65, PTD80N06, PTF10N65, PTF10HN08, STP75NF75, PTF12N65, PTF13N50, PTF2N65, PTF5N65, PTF7N65, PTF8N65, PTN3006, PTN30P03
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
