All MOSFET. PTY10HN08 Datasheet

 

PTY10HN08 Datasheet and Replacement


   Type Designator: PTY10HN08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO263
 

 PTY10HN08 substitution

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PTY10HN08 Datasheet (PDF)

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PTY10HN08

PTF10HN08/PTY10HN0880V/100A N-Chnnel MOSFETFeaturesD 80V/100ARDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive LossS High avalanche CurrentD% 100 Avalanche TestedApplicationG SG D S Power SupplyTO-220F TO-263 DC-DC Converters UPS Battery Manageme eAbsolute Maximum Ratings

Datasheet: PTD4080B , PTD4N60 , PTD50N06 , PTD60N02 , PTD7N65 , PTD80N06 , PTF10N65 , PTF10HN08 , SKD502T , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 , PTF8N65 , PTN3006 , PTN30P03 .

History: AP99LT06GI-HF | NCE1490 | ZXMN2A01F | IXZ2210N50L

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