PTF8N65 Datasheet. Specs and Replacement

Type Designator: PTF8N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO220F

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PTF8N65 datasheet

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PTF8N65

PTF8 N65 65 0V/8 A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 0.9 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t... See More ⇒

Detailed specifications: PTF10N65, PTF10HN08, PTY10HN08, PTF12N65, PTF13N50, PTF2N65, PTF5N65, PTF7N65, K3569, PTN3006, PTN30P03, PTP10HN10, PTP12HN06, PTY12HN06, PTP4N60, PTF4N60, PDB1216E

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