All MOSFET. PTF8N65 Datasheet

 

PTF8N65 Datasheet and Replacement


   Type Designator: PTF8N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220F
 

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PTF8N65 Datasheet (PDF)

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PTF8N65

PTF8 N6565 0V/8 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 0.9 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t

Datasheet: PTF10N65 , PTF10HN08 , PTY10HN08 , PTF12N65 , PTF13N50 , PTF2N65 , PTF5N65 , PTF7N65 , SPP20N60C3 , PTN3006 , PTN30P03 , PTP10HN10 , PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E .

History: AP4800CGM-HF | KP746V1 | AM90P04-07P | VBM17R10 | CSFR4N60P | IPU090N03LG | MRF151G

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