PTP12HN06 Datasheet. Specs and Replacement
Type Designator: PTP12HN06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 521 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: TO220
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PTP12HN06 substitution
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PTP12HN06 datasheet
ptp12hn06 pty12hn06.pdf
PTP12HN06/PTY12HN06 60V/65AN-ChnnelMOSFET 60V/120A N-Chnnel MOSFET Features 60V/120A A D RDS(ON)=4.2m VGS=10V (typ.)@ V Lead fre en Device A ee and Gree Available Low Rds ductive Loss G s-on to Minimize Cond s High ava urrent alanche Cu S % 100 Avalanche Tested D Application Power Supply G S DC-DC Converters UPS TO-... See More ⇒
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PTP12N60 PTA12N60 600V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 600V 0.55 12A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand ... See More ⇒
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PTP12N65 PTA12N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.60 12A RDS(ON),typ.=0.60 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand ... See More ⇒
Detailed specifications: PTF13N50, PTF2N65, PTF5N65, PTF7N65, PTF8N65, PTN3006, PTN30P03, PTP10HN10, SKD502T, PTY12HN06, PTP4N60, PTF4N60, PDB1216E, PDB3010H, PDC2306Z, PDC2603Z, PDC2604Z
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