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PDC2604Z Spec and Replacement


   Type Designator: PDC2604Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31.2 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: PPAK3X3

 PDC2604Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDC2604Z Specs

 ..1. Size:462K  potens
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PDC2604Z

20V N-Channel MOSFETs PDC2604Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 3.5m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 20V,80A, RDS(ON) =3.5m @VGS = 10V performance, and withstand high energ... See More ⇒

 8.1. Size:1040K  potens
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PDC2604Z

20V P-Channel MOSFETs PDC2603Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 8m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-60A, RDS(ON) =8m @VGS = -4.5V performance, and withstand high e... See More ⇒

Detailed specifications: PTP12HN06 , PTY12HN06 , PTP4N60 , PTF4N60 , PDB1216E , PDB3010H , PDC2306Z , PDC2603Z , AON6380 , PDC3801R , PDC3803R , PDC3810V , PDC3902X , PDC3903X , PDC3903Z , PDC3904Z , PDC3905Z .

History: HM8N25K | F50N20 | PSMN3R9-100YSF | SSF18NS60F | AP0803GMT-A-HF | HAF1002L | AP15TP1R0YT

Keywords - PDC2604Z MOSFET specs

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