All MOSFET. PDC2604Z Datasheet

 

PDC2604Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: PDC2604Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 31.2 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: PPAK3X3

 PDC2604Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PDC2604Z Datasheet (PDF)

 ..1. Size:462K  potens
 pdc2604z.pdf

PDC2604Z PDC2604Z

20V N-Channel MOSFETs PDC2604Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 3.5m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 20V,80A, RDS(ON) =3.5m@VGS = 10V performance, and withstand high energ

 8.1. Size:1040K  potens
 pdc2603z.pdf

PDC2604Z PDC2604Z

20V P-Channel MOSFETs PDC2603Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 8m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-60A, RDS(ON) =8m@VGS = -4.5V performance, and withstand high e

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SL42N120A

 

 
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