PDC906Z Datasheet. Specs and Replacement

Type Designator: PDC906Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PPAK3X3

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PDC906Z datasheet

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PDC906Z

30V N-Channel MOSFETs PDC906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m @VGS = 10V performance, and withstand high energy p... See More ⇒

Detailed specifications: PDC3907Z, PDC3908X, PDC3908Z, PDC3912Z, PDC3960X, PDC3964X, PDC3964Z, PDC8974X, AO3407, PDD0906, PDD3906, PDD3908, PDD6902, PDEC2210V, PDH0980, PDH6902, PDK3908

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