All MOSFET. PDC906Z Datasheet

 

PDC906Z Datasheet and Replacement


   Type Designator: PDC906Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PPAK3X3
 

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PDC906Z Datasheet (PDF)

 ..1. Size:591K  potens
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PDC906Z

30V N-Channel MOSFETs PDC906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m@VGS = 10V performance, and withstand high energy p

Datasheet: PDC3907Z , PDC3908X , PDC3908Z , PDC3912Z , PDC3960X , PDC3964X , PDC3964Z , PDC8974X , 7N60 , PDD0906 , PDD3906 , PDD3908 , PDD6902 , PDEC2210V , PDH0980 , PDH6902 , PDK3908 .

History: CSM150 | AP3N2R8MT | FDU8882 | 2P979A | CS9N80P | PDN2313S | 2N7002SSGP

Keywords - PDC906Z MOSFET datasheet

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