All MOSFET. PDS3807 Datasheet

 

PDS3807 Datasheet and Replacement


   Type Designator: PDS3807
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.8 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOP8
 

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PDS3807 Datasheet (PDF)

 ..1. Size:460K  potens
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PDS3807

30V P-Channel MOSFETs PDS3807 General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 23m -7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-7A, RDS(ON) =23m@VGS = -10V performance, and withstand high ene

 9.1. Size:387K  potens
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PDS3807

30V Dual N-Channel MOSFETs PDS3812 General Description BVDSS RDSON IDThese N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 20m 7.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,7.5A, RDS(ON) =20m @VGS = 10V performance, and withstand hig

Datasheet: PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 , AO3407 , PDS3812 , PDS3903 , PDS4810 , PDS4906 , PDS4909 , PDS6903 , PDS6904 , PDS6910 .

History: IRF6892S | IRF7750G | 2SK1590 | IPD60R600P7 | STS65R580FS2 | WMM16N70SR | SSP65R600S2

Keywords - PDS3807 MOSFET datasheet

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