All MOSFET. PTY80N60 Datasheet

 

PTY80N60 Datasheet and Replacement


   Type Designator: PTY80N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

 PTY80N60 substitution

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PTY80N60 Datasheet (PDF)

 ..1. Size:3376K  cn puolop
 ptp80n60 pty80n60.pdf pdf_icon

PTY80N60

PTP80N60/PTY80N6060V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current % 100 Avalanche TestedDApplicationG S Power SupplyTO-220 TO-263 DC-DC Converters UPS Battery Manageme ent System Absolute Maxim

 8.1. Size:3655K  cn puolop
 ptp80n06 pty80n06.pdf pdf_icon

PTY80N60

PTP80N06/PTY80N0660V/80A N-Chnnel MOSFETFeaturesD 60V/80ARDS(ON)=7.3m @ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current % 100 Avalanche TestedDApplicationG S Power SupplyTO-220 TO-263 DC-DC Converters UPS Battery Manageme ent System Absolute Maxim

Datasheet: PDS6910 , PMEB2516P , PMEN2423S , PTP4N65 , PTF4N65 , PTP80N06 , PTY80N06 , PTP80N60 , IRF1404 , PTP88N07 , PTY88N07 , PTP90N08 , PTY90N08 , PTQ45P02 , PTS2017 , PTS4614 , PTS4803 .

History: SSG6680 | SI7452DP | SFW095N200C3 | SST111 | CS40N06 | HRLO110N03K | BFD77

Keywords - PTY80N60 MOSFET datasheet

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