PTP90N08 Specs and Replacement
Type Designator: PTP90N08
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 440 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
PTP90N08 substitution
- MOSFET ⓘ Cross-Reference Search
PTP90N08 datasheet
ptp90n08 pty90n08.pdf
PTP90N08/PTY90N08 80V/90A N-Chnnel MOSFET Features D 80V/90A RDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D % 100 Avalanche Tested Application G S G D S Power Supply TO-220F TO-263 DC-DC Converters UPS Battery Manageme e Absolute Maximum Ratings (T ... See More ⇒
Detailed specifications: PTP4N65, PTF4N65, PTP80N06, PTY80N06, PTP80N60, PTY80N60, PTP88N07, PTY88N07, IRF640N, PTY90N08, PTQ45P02, PTS2017, PTS4614, PTS4803, PTS4842, PTS4936, A03415
Keywords - PTP90N08 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IMW65R107M1H
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