PTY90N08 Datasheet and Replacement
Type Designator: PTY90N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 440 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263
PTY90N08 substitution
PTY90N08 Datasheet (PDF)
ptp90n08 pty90n08.pdf

PTP90N08/PTY90N0880V/90A N-Chnnel MOSFETFeaturesD 80V/90ARDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive LossS High avalanche CurrentD% 100 Avalanche TestedApplicationG SG D S Power SupplyTO-220F TO-263 DC-DC Converters UPS Battery Manageme eAbsolute Maximum Ratings (T
Datasheet: PTF4N65 , PTP80N06 , PTY80N06 , PTP80N60 , PTY80N60 , PTP88N07 , PTY88N07 , PTP90N08 , 10N60 , PTQ45P02 , PTS2017 , PTS4614 , PTS4803 , PTS4842 , PTS4936 , A03415 , APM2301AAC .
History: SQ3987EV
Keywords - PTY90N08 MOSFET datasheet
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PTY90N08 substitution
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History: SQ3987EV



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