PTQ45P02 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTQ45P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 55 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 577 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN3333
PTQ45P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTQ45P02 Datasheet (PDF)
ptq45p02.pdf
PTQ4 5P02-20V/-4 5A P-Channel Advanced Power MOSFETFeatures BVDSS -20 V - 1.8V Logic Level Control ID -45 A PDFN3333 SMD Package mRDSON@VGS=-4.5V 9Applications RDSON@VGS=-2.5V m12 High Side Load Switch RDSON@VGS=-1.8V m Battery Switch 16 Optimized for Power Management Applications for Portable Products, such as Aeromodelling, Power bank,
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: QM6008P | IXFH320N10T2
History: QM6008P | IXFH320N10T2
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918