PTS4803 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTS4803
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
PTS4803 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTS4803 Datasheet (PDF)
pts4803.pdf
PTS4803 -30V/-5.8A Dual P-Channel Advanced Power MOSFET Features Key Items PMOS Unit Low RDS(on) @VGS=-5V BVDSS -30 V 5V Logic Level Control ID -5.8 A Dual P-Channel SOP8 Package RDSON1@Vgs=-4.5V 50 m Pb-Free, RoHS Compliant RDSON2@vgs=-2.5V 70 m Applications The PTS4803 uses advanced trench technology to provide excellent RDS(ON) with low gate c
pts4842.pdf
PTS484230V/7.7A Dual N-Channel Advanced Power MOSFETPin Description Features BVDSS30V, RDS(ON)=21m(Typ)@VGS=10V Low On-Resistance Fast Switching Lead-Free,Hg-Free, Green Product PTS4PTS4PTS4842 designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features
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