TN0104N8
MOSFET. Datasheet pdf. Equivalent
Type Designator: TN0104N8
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6
V
|Id|ⓘ - Maximum Drain Current: 0.63
A
Tjⓘ - Maximum Junction Temperature: 200
°C
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
SOT89
TN0104N8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TN0104N8
Datasheet (PDF)
8.1. Size:730K supertex
tn0104.pdf
Supertex inc. TN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor High input impedance utilizes a vertical DMOS structure and Supertexs well-proven, Low input capacitance silicon-gate manufacturing process. This combination produces Fast switching sp
9.1. Size:602K supertex
tn0106.pdf
Supertex inc. TN0106N-Channel Enhancement-ModeVertical DMOS FETGeneral DescriptionFeaturesThis low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max.transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance - 50pF typicalcombination produces a
9.2. Size:163K ape
ap10tn010cmt.pdf
AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the
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