TN0104N8 Datasheet. Specs and Replacement

Type Designator: TN0104N8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.63 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SOT89

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TN0104N8 datasheet

 8.1. Size:730K  supertex
tn0104.pdf pdf_icon

TN0104N8

Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor High input impedance utilizes a vertical DMOS structure and Supertex s well-proven, Low input capacitance silicon-gate manufacturing process. This combination produces Fast switching sp... See More ⇒

 9.1. Size:602K  supertex
tn0106.pdf pdf_icon

TN0104N8

Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max. transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance - 50pF typical combination produces a ... See More ⇒

 9.2. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

TN0104N8

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the ... See More ⇒

Detailed specifications: TA17656, TA75307, TA75309, TA75321, TA75329, TA75333, TA75339, TN0104N3, AON6414A, VN10LF, VN10LP, VN2222LL, ZDM4206N, ZDM4306N, ZVN0120A, ZVN0124A, ZVN0540A

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