TN0104N8 Datasheet and Replacement
Type Designator: TN0104N8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.63 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT89
TN0104N8 substitution
TN0104N8 Datasheet (PDF)
tn0104.pdf

Supertex inc. TN0104N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off) transistor High input impedance utilizes a vertical DMOS structure and Supertexs well-proven, Low input capacitance silicon-gate manufacturing process. This combination produces Fast switching sp
tn0106.pdf

Supertex inc. TN0106N-Channel Enhancement-ModeVertical DMOS FETGeneral DescriptionFeaturesThis low threshold, enhancement-mode (normally-off) Low threshold - 2.0V max.transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance - 50pF typicalcombination produces a
ap10tn010cmt.pdf

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the
Datasheet: TA17656 , TA75307 , TA75309 , TA75321 , TA75329 , TA75333 , TA75339 , TN0104N3 , AON6414A , VN10LF , VN10LP , VN2222LL , ZDM4206N , ZDM4306N , ZVN0120A , ZVN0124A , ZVN0540A .
Keywords - TN0104N8 MOSFET datasheet
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History: GT68N12T | 2SK3905



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