All MOSFET. SWD10N70K Datasheet

 

SWD10N70K Datasheet and Replacement


   Type Designator: SWD10N70K
   Marking Code: SW10N70K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: TO252
 

 SWD10N70K substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWD10N70K Datasheet (PDF)

 ..1. Size:905K  samwin
 swf10n70k swd10n70k.pdf pdf_icon

SWD10N70K

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D

 ..2. Size:946K  samwin
 sw10n70k swf10n70k swd10n70k.pdf pdf_icon

SWD10N70K

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De

 8.1. Size:1355K  samwin
 swf10n50k swp10n50k swt10n50k swn10n50k swd10n50k.pdf pdf_icon

SWD10N70K

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS : 500V ID : 10A High ruggedness Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application:LED, PC Power, Cha

 8.2. Size:820K  samwin
 swf10n80k2 swn10n80k2 swd10n80k2.pdf pdf_icon

SWD10N70K

SW10N80K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET TO-220F TO-251N TO-252 BVDSS : 800V Features ID : 10A High ruggedness RDS(ON) : 0.58 Low RDS(ON) (Typ 0.58)@VGS=10V Low Gate Charge (Typ 27nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application:LED,Charger,PC Power 1. Gate 2. Drain

SHOW MORE

Datasheet: SWB075R06ET , SWP075R06ET , SWK088R06VT , SWI088R06VT , SWD088R06VT , SWHA088R06VT , SWU10N70D , SWF10N70K , IRFB31N20D , SWF12N65D , SWU12N65D , SWP12N65D , SWB12N65D , SWF12N70D , SWU12N70D , SWMN12N70D , SWY12N70D .

History: STH180N10F3-2

Keywords - SWD10N70K MOSFET datasheet

 SWD10N70K cross reference
 SWD10N70K equivalent finder
 SWD10N70K lookup
 SWD10N70K substitution
 SWD10N70K replacement

 

 
Back to Top

 


 
.