SWD10N70K PDF and Equivalents Search

 

SWD10N70K Specs and Replacement

Type Designator: SWD10N70K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO252

SWD10N70K substitution

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SWD10N70K datasheet

 ..1. Size:905K  samwin
 swf10n70k swd10n70k.pdf pdf_icon

SWD10N70K

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D... See More ⇒

 ..2. Size:946K  samwin
 sw10n70k swf10n70k swd10n70k.pdf pdf_icon

SWD10N70K

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De... See More ⇒

 8.1. Size:1355K  samwin
 swf10n50k swp10n50k swt10n50k swn10n50k swd10n50k.pdf pdf_icon

SWD10N70K

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS 500V ID 10A High ruggedness Low RDS(ON) (Typ 0.26 )@VGS=10V RDS(ON) 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application LED, PC Power, Cha... See More ⇒

 8.2. Size:820K  samwin
 swf10n80k2 swn10n80k2 swd10n80k2.pdf pdf_icon

SWD10N70K

SW10N80K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET TO-220F TO-251N TO-252 BVDSS 800V Features ID 10A High ruggedness RDS(ON) 0.58 Low RDS(ON) (Typ 0.58 )@VGS=10V Low Gate Charge (Typ 27nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application LED,Charger,PC Power 1. Gate 2. Drain ... See More ⇒

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Detailed specifications: SWB075R06ET, SWP075R06ET, SWK088R06VT, SWI088R06VT, SWD088R06VT, SWHA088R06VT, SWU10N70D, SWF10N70K, IRF2807, SWF12N65D, SWU12N65D, SWP12N65D, SWB12N65D, SWF12N70D, SWU12N70D, SWMN12N70D, SWY12N70D

Keywords - SWD10N70K MOSFET specs

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