SWY12N70D
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWY12N70D
Marking Code: SW12N70D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 37.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 47
nC
trⓘ - Rise Time: 43
nS
Cossⓘ -
Output Capacitance: 154
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.87
Ohm
Package:
TO-220F
SWY12N70D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWY12N70D
Datasheet (PDF)
..1. Size:842K samwin
sw12n70d swf12n70d swu12n70d swmn12n70d swy12n70d.pdf
SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application:LED, PC Power, Char
..2. Size:997K samwin
swf12n70d swu12n70d swmn12n70d swy12n70d.pdf
SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 3 Application:LED, PC Power,
8.1. Size:673K samwin
swmn12n65d swy12n65d.pdf
SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS : 650V Features ID : 12A High ruggedness RDS(ON) : 0.66 Low RDS(ON) (Typ 0.66)@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source
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