All MOSFET. SWF15N65D Datasheet

 

SWF15N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWF15N65D
   Marking Code: SW15N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO220F

 SWF15N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWF15N65D Datasheet (PDF)

 ..1. Size:742K  samwin
 swf15n65d.pdf

SWF15N65D SWF15N65D

SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 15A High ruggedness RDS(ON) : 0.57 Low RDS(ON) (Typ 0.57)@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow

 ..2. Size:742K  samwin
 sw15n65d swf15n65d.pdf

SWF15N65D SWF15N65D

SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 15A High ruggedness RDS(ON) : 0.57 Low RDS(ON) (Typ 0.57)@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow

 8.1. Size:737K  samwin
 swf15n50.pdf

SWF15N65D SWF15N65D

SW15N50 N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 500V High ruggedness ID : 15A Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 66nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application: DC-DC,LED,PC 2 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is

 8.2. Size:738K  samwin
 swf15n50da.pdf

SWF15N65D SWF15N65D

SW15N50DA N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 500V High ruggedness Low RDS(ON) (Typ 0.33)@VGS=10V ID : 15A Low Gate Charge (Typ 57nC) RDS(ON) : 0.33 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This p

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BF1100

 

 
Back to Top