SWD15P02
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWD15P02
Marking Code: SW15P02
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 69.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 91
nC
trⓘ - Rise Time: 67
nS
Cossⓘ -
Output Capacitance: 490
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package:
TO-252
SWD15P02
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWD15P02
Datasheet (PDF)
..1. Size:997K samwin
swi15p02 swd15p02 swh15p02 swha15p02.pdf
SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1
..2. Size:997K samwin
sw15p02 swi15p02 swd15p02 swh15p02 swha15p02.pdf
SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1
9.1. Size:1002K samwin
swmn15n65j swd15n65j.pdf
SW15N65JN-channel Enhanced mode TO-220SF/TO-252 MOSFETFeaturesTO-220SF TO-252BVDSS : 650V High ruggednessID : 15A Low RDS(ON) (Typ 0.22)@VGS=10VRDS(ON) : 0.22 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:LED , Charger, PC Power 3311. Gate 2. Drain 3. SourceGeneral DescriptionThis p
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