SWF16N65D MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

SWF16N65D Specs and Replacement

Type Designator: SWF16N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 228 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm

Package: TO220F

SWF16N65D substitution

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SWF16N65D datasheet

..1. Size:820K samwin
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SW16N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.46 )@VGS=10V ID 16A Low Gate Charge (Typ 68nC) RDS(ON) 0.46 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Charger, Adaptor, LED 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produce... See More ⇒

..2. Size:820K samwin
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6.1. Size:1213K samwin
sw16n65k swp16n65k swf16n65k swb16n65k.pdf pdf_icon

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS 650V ID 16A High ruggedness Low RDS(ON) (Typ 0.23 )@VGS=10V RDS(ON) 0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source ... See More ⇒

6.2. Size:1143K samwin
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SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS 650V ID 16A High ruggedness Low RDS(ON) (Typ 0.23 )@VGS=10V RDS(ON) 0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source ... See More ⇒