All MOSFET. SWT18N50D Datasheet

 

SWT18N50D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWT18N50D
   Marking Code: SW18N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO247

 SWT18N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWT18N50D Datasheet (PDF)

 ..1. Size:911K  samwin
 swf18n50d swt18n50d.pdf

SWT18N50D SWT18N50D

SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS : 500V Features ID : 18A High ruggedness RDS(ON) : 0.24 Low RDS(ON) (Typ 0.24)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General

 ..2. Size:652K  samwin
 sw18n50d swf18n50d swt18n50d.pdf

SWT18N50D SWT18N50D

SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS : 500V Features ID : 18A High ruggedness RDS(ON) : 0.24 Low RDS(ON) (Typ 0.24)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General D

 8.1. Size:932K  samwin
 swf18n65d swt18n65d.pdf

SWT18N50D SWT18N50D

SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 18A High ruggedness RDS(ON) : 0.35 Low RDS(ON) (Typ 0.35)@VGS=10V Low Gate Charge (Typ 79nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 3 1 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 Gen

 8.2. Size:621K  samwin
 sw18n65d swf18n65d swt18n65d.pdf

SWT18N50D SWT18N50D

SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 18A High ruggedness RDS(ON) : 0.35 Low RDS(ON) (Typ 0.35)@VGS=10V Low Gate Charge (Typ 79nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 3 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 Gene

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top