SWF18N65D
MOSFET. Datasheet pdf. Equivalent
Type Designator: SWF18N65D
Marking Code: SW18N65D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 79
nC
trⓘ - Rise Time: 78
nS
Cossⓘ -
Output Capacitance: 420
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.44
Ohm
Package:
TO-220F
SWF18N65D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWF18N65D
Datasheet (PDF)
..1. Size:932K samwin
swf18n65d swt18n65d.pdf
SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 18A High ruggedness RDS(ON) : 0.35 Low RDS(ON) (Typ 0.35)@VGS=10V Low Gate Charge (Typ 79nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 3 1 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 Gen
..2. Size:621K samwin
sw18n65d swf18n65d swt18n65d.pdf
SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 18A High ruggedness RDS(ON) : 0.35 Low RDS(ON) (Typ 0.35)@VGS=10V Low Gate Charge (Typ 79nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 3 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 Gene
7.1. Size:814K samwin
swf18n60d.pdf
SW18N60D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 600V Features ID : 18A High ruggedness RDS(ON) : 0.34 Low RDS(ON) (Typ 0.34)@VGS=10V Low Gate Charge (Typ 79nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This
8.1. Size:911K samwin
swf18n50d swt18n50d.pdf
SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS : 500V Features ID : 18A High ruggedness RDS(ON) : 0.24 Low RDS(ON) (Typ 0.24)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General
8.2. Size:652K samwin
sw18n50d swf18n50d swt18n50d.pdf
SW18N50D N-channel Enhanced mode TO-220F /TO-247 MOSFET TO-220F TO-247 BVDSS : 500V Features ID : 18A High ruggedness RDS(ON) : 0.24 Low RDS(ON) (Typ 0.24)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General D
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