SWK350R06VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWK350R06VT
Marking Code: SW350R06VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 66 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOP-8
SWK350R06VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWK350R06VT Datasheet (PDF)
swk350r06vt.pdf
SW350R06VT N-channel Enhanced mode SOP8 MOSFET SOP8 BVDSS : 60V Features 5 ID : 5A 6 7 8 RDS(ON) : 38m@VGS=4.5V High ruggedness 4 3 Low RDS(ON) (Typ 38m)@VGS=4.5V 2 33m@VGS=10V 1 (Typ 33m)@VGS=10V Low Gate Charge (Typ 21nC) D Improved dv/dt Capability 4.Gate 5,6,7,8.Drain 1,2,3.Source 100% Avalanche Tested G A
sw350r06vt swk350r06vt swi350r06vt swd350r06vt.pdf
SW350R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252 MOSFET Features SOP-8 TO-251 TO-252 BVDSS : 60V High ruggedness 5 SOP8 ID : 5A 6 SOP-8 Low RDS(ON) 7 8 RDS(ON) : 38m@VGS=4.5V (Typ 38m)@VGS=4.5V 4 3 (Typ 33m)@VGS=10V 2 33m@VGS=10V 1 TO-251&TO-252 Low RDS(ON) 1 1 2 2 (Typ 37m)@VGS=4.5V TO-251 & TO-252 ID : 24A 3
swk350r06vt swi350r06vt swd350r06vt.pdf
SW350R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252 MOSFET Features SOP-8 TO-251 TO-252 BVDSS : 60V High ruggedness 5 SOP8 ID : 5A 6 SOP-8 Low RDS(ON) 7 8 RDS(ON) : 38m@VGS=4.5V (Typ 38m)@VGS=4.5V 4 3 (Typ 33m)@VGS=10V 2 33m@VGS=10V 1 TO-251&TO-252 Low RDS(ON) 1 1 2 2 (Typ 37m)@VGS=4.5V TO-251 & TO-252 ID : 24A 3
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
