SWK350R06VT Datasheet and Replacement
Type Designator: SWK350R06VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOP-8
SWK350R06VT substitution
SWK350R06VT Datasheet (PDF)
swk350r06vt.pdf
SW350R06VT N-channel Enhanced mode SOP8 MOSFET SOP8 BVDSS : 60V Features 5 ID : 5A 6 7 8 RDS(ON) : 38m@VGS=4.5V High ruggedness 4 3 Low RDS(ON) (Typ 38m)@VGS=4.5V 2 33m@VGS=10V 1 (Typ 33m)@VGS=10V Low Gate Charge (Typ 21nC) D Improved dv/dt Capability 4.Gate 5,6,7,8.Drain 1,2,3.Source 100% Avalanche Tested G A
sw350r06vt swk350r06vt swi350r06vt swd350r06vt.pdf
SW350R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252 MOSFET Features SOP-8 TO-251 TO-252 BVDSS : 60V High ruggedness 5 SOP8 ID : 5A 6 SOP-8 Low RDS(ON) 7 8 RDS(ON) : 38m@VGS=4.5V (Typ 38m)@VGS=4.5V 4 3 (Typ 33m)@VGS=10V 2 33m@VGS=10V 1 TO-251&TO-252 Low RDS(ON) 1 1 2 2 (Typ 37m)@VGS=4.5V TO-251 & TO-252 ID : 24A 3
swk350r06vt swi350r06vt swd350r06vt.pdf
SW350R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252 MOSFET Features SOP-8 TO-251 TO-252 BVDSS : 60V High ruggedness 5 SOP8 ID : 5A 6 SOP-8 Low RDS(ON) 7 8 RDS(ON) : 38m@VGS=4.5V (Typ 38m)@VGS=4.5V 4 3 (Typ 33m)@VGS=10V 2 33m@VGS=10V 1 TO-251&TO-252 Low RDS(ON) 1 1 2 2 (Typ 37m)@VGS=4.5V TO-251 & TO-252 ID : 24A 3
Datasheet: SWF16N65K , SWB16N65K , SWF18N50D , SWT18N50D , SWF18N65D , SWT18N65D , SWF20N60K , SWF20N65K2 , 5N50 , SWI350R06VT , SWD350R06VT , SWT38N65KF , SWT47N65K2 , SWI4N60DC , SWD4N60DC , SWF4N65D , SWN4N65D .
Keywords - SWK350R06VT MOSFET datasheet
SWK350R06VT cross reference
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History: APM2324A | DH019N04I
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