All MOSFET. SWT47N65K2 Datasheet

 

SWT47N65K2 Datasheet and Replacement


   Type Designator: SWT47N65K2
   Marking Code: SW47N65K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 338 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 103 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: TO247
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SWT47N65K2 Datasheet (PDF)

 ..1. Size:810K  samwin
 sw47n65k2 swt47n65k2.pdf pdf_icon

SWT47N65K2

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p

 ..2. Size:748K  samwin
 swt47n65k2.pdf pdf_icon

SWT47N65K2

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description This

 0.1. Size:739K  samwin
 swt47n65k2f.pdf pdf_icon

SWT47N65K2

SW47N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 47A High ruggedness Low RDS(ON) (Typ 59m)@VGS=10V RDS(ON) : 59m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application: Charger, UPS , LED , Servicer 1. Gate 2. Drain 3. Source 3 General Description Th

 5.1. Size:733K  samwin
 swt47n65k.pdf pdf_icon

SWT47N65K2

SW47N65K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 650V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 60m)@VGS=10V RDS(ON) :60m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

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History: EC4406C | FQT1N80TF-WS | IRLS640A | IRFP140NPBF | FQD2N60TF | HGN120N06SL | 2SK1339

Keywords - SWT47N65K2 MOSFET datasheet

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