SWD630D Datasheet and Replacement
Type Designator: SWD630D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-252
SWD630D substitution
SWD630D Datasheet (PDF)
sw630d swp630d swd630d.pdf

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS : 200V High ruggedness ID : 9A Low RDS(ON) (Typ 0.27)@VGS=10V RDS(ON) : 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G
swp630d swd630d.pdf

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS : 200V High ruggedness ID : 9A Low RDS(ON) (Typ 0.27)@VGS=10V RDS(ON) : 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G
sw630 swp630 swf630 swd630.pdf

SAMWIN SW630N-channel MOSFETTO-220F TO-220 TO-252FeaturesBVDSS : 200V High ruggednessID : 10A RDS(ON) (Max 0.4 )@VGS=10V Gate Charge (Typ 20nC)RDS(ON) : 0.4ohm1 Improved dv/dt Capability 2 100% Avalanche Tested1 132 23 321. Gate 2. Drain 3. SourceGeneral Description1This power MOSFET is produced with advanced VDMOS technology of SAMW
Datasheet: SWB4N65D , SWP4N65D , SWMQI4N65D , SWI4N70D , SWN4N70D , SWD4N70D , SWF4N70D , SWP630D , 7N65 , SWN6N70DA , SWSI6N70DA , SWUI6N70DA , SWD6N70DA , SWF6N70DA , SWI6N70DA , SWNX6N70DA , SWP6N70DA .
History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF
Keywords - SWD630D MOSFET datasheet
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SWD630D replacement
History: NTHS4101PT1G | STL70N10F3 | FDZ375P | 2SK538 | 2SK3541MGP | SFS12R08PNF



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