SWMQI6N70DA MOSFET. Datasheet pdf. Equivalent
Type Designator: SWMQI6N70DA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 138.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 88 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO-251
SWMQI6N70DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWMQI6N70DA Datasheet (PDF)
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SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l
swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l
swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf
SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
