SWN6N80D Datasheet. Specs and Replacement
Type Designator: SWN6N80D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 91 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-251
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SWN6N80D substitution
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SWN6N80D datasheet
sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS 800V TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED... See More ⇒
swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 BVDSS 800V TO-262 TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED , Charger, SMPS 1.... See More ⇒
sw6n70da swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
SW6N70DA N-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F /TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFET TO251N TO251S TO251U TO252 TO220F Features BVDSS 700V l High ruggedness ID 6A l Low RDS(ON) (Typ 1.7 ) 1 1 RDS(ON) 1.7 1 1 @VGS=10V 2 2 2 2 1 3 3 2 3 3 l Low Gate Charge (Typ 26nC) 3 2 l Improved dv/dt Capability TO220 TO251Q TO251NX TO251 TO251MQ l ... See More ⇒
swf6n60d swd6n60d swn6n60d.pdf
SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS 600V High ruggedness ID 6A Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source... See More ⇒
Detailed specifications: SWI6N70DA, SWNX6N70DA, SWP6N70DA, SWQI6N70DA, SWMQI6N70DA, SWF6N70K, SWN6N70K, SWD6N70K, IRF1010E, SWF6N80D, SWD6N80D, SWU6N80D, SWJ6N80D, SWF7N60D, SWP7N60D, SWI7N60D, SWD7N60D
Keywords - SWN6N80D MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: QM3002U | FDB075N15A
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