SWJ6N80D Specs and Replacement
Type Designator: SWJ6N80D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 186.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 91 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-262
SWJ6N80D substitution
- MOSFET ⓘ Cross-Reference Search
SWJ6N80D datasheet
sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS 800V TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED... See More ⇒
swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 BVDSS 800V TO-262 TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED , Charger, SMPS 1.... See More ⇒
swf6n90d swj6n90d.pdf
SW6N90D N-channel Enhanced mode TO-220F/TO-262N MOSFET TO-220F TO-262N Features BVDSS 900V ID 6A High ruggedness Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 42nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 3 3 Application UPS, LED, SMPS 1 1. Gate 2. Drain 3. Source 3 General Description ... See More ⇒
Detailed specifications: SWMQI6N70DA, SWF6N70K, SWN6N70K, SWD6N70K, SWN6N80D, SWF6N80D, SWD6N80D, SWU6N80D, K3569, SWF7N60D, SWP7N60D, SWI7N60D, SWD7N60D, SWP7N65D, SWI7N65D, SWN7N65D, SWD7N65D
Keywords - SWJ6N80D MOSFET specs
SWJ6N80D cross reference
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SWJ6N80D replacement
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