All MOSFET. SWU7N80D Datasheet

 

SWU7N80D Datasheet and Replacement


   Type Designator: SWU7N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-262
 

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SWU7N80D Datasheet (PDF)

 ..1. Size:725K  samwin
 sw7n80d swf7n80d swu7n80d swj7n80d.pdf pdf_icon

SWU7N80D

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS : 800V Features ID : 7A High ruggedness RDS(ON) : 1.5 Low RDS(ON) (Typ 1.5)@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source

 ..2. Size:754K  samwin
 swf7n80d swu7n80d swj7n80d.pdf pdf_icon

SWU7N80D

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS : 800V Features ID : 7A High ruggedness RDS(ON) : 1.5 Low RDS(ON) (Typ 1.5)@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source

Datasheet: SWMN7N65D , SWJ7N65D , SWHA7N65D , SWD7N70D , SWN7N70D , SWJ7N70D , SWF7N70D , SWF7N80D , IRF1407 , SWJ7N80D , SWI8N65DB , SWD8N65DB , SWF8N65DB , SWJ8N65DB , SWF8N70D , SWJ8N70D , SSF60R190S2 .

History: TPC8013-H | HYG050N08NS1P | RD3T100CN | 16N60B | STB10LN80K5 | AP3400S | IPD64CN10NG

Keywords - SWU7N80D MOSFET datasheet

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