SWU7N80D Specs and Replacement

Type Designator: SWU7N80D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-262

SWU7N80D substitution

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SWU7N80D datasheet

 ..1. Size:725K  samwin
 sw7n80d swf7n80d swu7n80d swj7n80d.pdf pdf_icon

SWU7N80D

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS 800V Features ID 7A High ruggedness RDS(ON) 1.5 Low RDS(ON) (Typ 1.5 )@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source ... See More ⇒

 ..2. Size:754K  samwin
 swf7n80d swu7n80d swj7n80d.pdf pdf_icon

SWU7N80D

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS 800V Features ID 7A High ruggedness RDS(ON) 1.5 Low RDS(ON) (Typ 1.5 )@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source ... See More ⇒

Detailed specifications: SWMN7N65D, SWJ7N65D, SWHA7N65D, SWD7N70D, SWN7N70D, SWJ7N70D, SWF7N70D, SWF7N80D, IRFP450, SWJ7N80D, SWI8N65DB, SWD8N65DB, SWF8N65DB, SWJ8N65DB, SWF8N70D, SWJ8N70D, SSF60R190S2

Keywords - SWU7N80D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.