SWJ7N80D Datasheet. Specs and Replacement

Type Designator: SWJ7N80D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-262

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SWJ7N80D datasheet

 ..1. Size:725K  samwin
sw7n80d swf7n80d swu7n80d swj7n80d.pdf pdf_icon

SWJ7N80D

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS 800V Features ID 7A High ruggedness RDS(ON) 1.5 Low RDS(ON) (Typ 1.5 )@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source ... See More ⇒

 ..2. Size:754K  samwin
swf7n80d swu7n80d swj7n80d.pdf pdf_icon

SWJ7N80D

SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS 800V Features ID 7A High ruggedness RDS(ON) 1.5 Low RDS(ON) (Typ 1.5 )@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source ... See More ⇒

 9.1. Size:970K  samwin
swf7n70k swi7n70k swd7n70k swp7n70k swj7n70k.pdf pdf_icon

SWJ7N80D

SW7N70K N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N MOSFET BVDSS 700V TO-262N TO-220F TO-251 TO-252 TO-220 Features ID 7A High ruggedness RDS(ON) 0.81 Low RDS(ON) (Typ 0.81 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 1 2 2 1 1 2 100% Avalanche Tested 2 2 3 3 3 3 3 Application ... See More ⇒

 9.2. Size:972K  samwin
sw7n70d swd7n70d swn7n70d swj7n70d swf7n70d.pdf pdf_icon

SWJ7N80D

SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS 700V High ruggedness ID 7A Low RDS(ON) (Typ 1.2 )@VGS=10V RDS(ON) 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application LED, Charger, TV-Power 3... See More ⇒

Detailed specifications: SWJ7N65D, SWHA7N65D, SWD7N70D, SWN7N70D, SWJ7N70D, SWF7N70D, SWF7N80D, SWU7N80D, STP80NF70, SWI8N65DB, SWD8N65DB, SWF8N65DB, SWJ8N65DB, SWF8N70D, SWJ8N70D, SSF60R190S2, SSP60R190S2

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