SWJ7N80D MOSFET Datasheet: N-Ch, 800V, 7A. Full specification with pinout and replacement list

SWJ7N80D Specs and Replacement

   Type Designator: SWJ7N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-262

SWJ7N80D substitution

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SWJ7N80D datasheet

..1. Size:725K samwin
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SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS 800V Features ID 7A High ruggedness RDS(ON) 1.5 Low RDS(ON) (Typ 1.5 )@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source ... See More ⇒

..2. Size:754K samwin
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9.1. Size:970K samwin
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SW7N70K N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N MOSFET BVDSS 700V TO-262N TO-220F TO-251 TO-252 TO-220 Features ID 7A High ruggedness RDS(ON) 0.81 Low RDS(ON) (Typ 0.81 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 1 2 2 1 1 2 100% Avalanche Tested 2 2 3 3 3 3 3 Application ... See More ⇒

9.2. Size:972K samwin
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SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS 700V High ruggedness ID 7A Low RDS(ON) (Typ 1.2 )@VGS=10V RDS(ON) 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application LED, Charger, TV-Power 3... See More ⇒