All MOSFET. SWF8N65DB Datasheet

 

SWF8N65DB Datasheet and Replacement


   Type Designator: SWF8N65DB
   Marking Code: SW8N65DB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 34 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220F
 

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SWF8N65DB Datasheet (PDF)

 ..1. Size:1132K  samwin
 sw8n65db swi8n65db swd8n65db swf8n65db swj8n65db.pdf pdf_icon

SWF8N65DB

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS : 650V TO-251 TO-252 TO-220F TO-262N ID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application:LED, Charge, PC Power 3 3 3 3 1

 ..2. Size:1066K  samwin
 swi8n65db swd8n65db swf8n65db swj8n65db.pdf pdf_icon

SWF8N65DB

SW8N65DBN-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFETFeatures BVDSS : 650VTO-251 TO-252TO-220F TO-262NID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC)2 Improved dv/dt Capability 1 100% Avalanche Tested 11 12 22 2 Application:LED, Charger, PC Power3 33 311. Gate 2. Drain

 6.1. Size:1171K  samwin
 swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf pdf_icon

SWF8N65DB

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS : 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID : 8A High ruggedness RDS(ON) : 1.1 Low RDS(ON) (Typ 1.1)@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application:Charg

 8.1. Size:804K  samwin
 swu8n60d swf8n60d.pdf pdf_icon

SWF8N65DB

SW8N60D N-channel Enhanced mode TO-262/TO-220F MOSFET Features TO-262 BVDSS : 600V TO-220F ID : 8A High ruggedness Low RDS(ON) (Typ 0.92)@VGS=10V RDS(ON) : 0.92 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:LED,Charger,PC Power 2 3 3 1. Gate 2. Drain 3. Source 1 General Descr

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Datasheet: SWN7N70D , SWJ7N70D , SWF7N70D , SWF7N80D , SWU7N80D , SWJ7N80D , SWI8N65DB , SWD8N65DB , 10N65 , SWJ8N65DB , SWF8N70D , SWJ8N70D , SSF60R190S2 , SSP60R190S2 , SSW60R190S2 , SSF60R190SFD , SSP60R190SFD .

Keywords - SWF8N65DB MOSFET datasheet

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