ZVN2110G
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVN2110G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
SOT223
ZVN2110G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVN2110G
Datasheet (PDF)
..1. Size:48K diodes
zvn2110g.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain
0.1. Size:37K diodes
zvn2110gta zvn2110gtc.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain
7.1. Size:61K diodes
zvn2110astoa zvn2110astob zvn2110astz.pdf
N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS
7.2. Size:66K diodes
zvn2110a.pdf
N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS
7.3. Size:26K diodes
zvn2110c.pdf
N-CHANNEL ENHANCEMENTZVN2110CMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-Line T V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V 8 V ID VD V V I
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