SSA47N60S MOSFET. Datasheet pdf. Equivalent
Type Designator: SSA47N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 391 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 47 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 64 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 910 pF
Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm
Package: TO3P
SSA47N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSA47N60S Datasheet (PDF)
0.1. ssw47n60sfd ssa47n60sfd.pdf 
Size:1289K _cn_super_semi
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET With Fast-Recovery SS*47N60SFD Rev. 1.5 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60SFD/SSA47N60SFD 600V N-Channel MOSFET With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Mult
0.2. ssw47n60s ssa47n60s.pdf Size:1214K _cn_super_semi
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET SS*47N60S Rev. 1.3 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60S/SSA47N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism fo
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