TSM60NB1R4CH Specs and Replacement
Type Designator: TSM60NB1R4CH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.4 nS
Cossⓘ - Output Capacitance: 41.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251
TSM60NB1R4CH substitution
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TSM60NB1R4CH datasheet
tsm60nb1r4ch.pdf
TSM60NB1R4CH Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.4 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance due to small figure-of-merit VDS 600 V High ruggedness performance RDS(on) (max) 1.4 High commutation performance Qg 7.12 nC 100% UIL tested Pb-free plating Comp... See More ⇒
tsm60n03cp.pdf
TSM60N03 30V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition (DPAK) 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 30 4.5 @ VGS =10V 60 Features Block Diagram Advanced Trench Technology Low RDS(ON) 4.5m (Max.) Low gate charge typical @ 12nC (Typ.) Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Packag... See More ⇒
tsm60n06cp.pdf
TSM60N06 60V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition (DPAK) 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Drain 3. Source 60 7.3 @ VGS =10V 66 Features Block Diagram Advanced Trench Technology Low RDS(ON) 7.3m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Packag... See More ⇒
Detailed specifications: YPN438S, ASM6115, MMFTP3401, GDSSF2300, TSM10NC60CF, TSM150P04LCS, TSM2301A, TSM240N03CX, 5N65, TSM650P03CX, TSM900N06CH, TSM900N06CP, TSM900N06CW, CI28N120SM, CI30N120SM, CI47N65, CI60N120SM
Keywords - TSM60NB1R4CH MOSFET specs
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