TSM60NB1R4CH Datasheet and Replacement. Cross Reference Search

TSM60NB1R4CH Datasheet (PDF)

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TSM60NB1R4CH Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.4 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance due to small figure-of-merit VDS 600 V High ruggedness performance RDS(on) (max) 1.4 High commutation performance Qg 7.12 nC 100% UIL tested Pb-free plating Comp

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TSM60N03 30V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 30 4.5 @ VGS =10V 60 Features Block Diagram Advanced Trench Technology Low RDS(ON) 4.5m (Max.) Low gate charge typical @ 12nC (Typ.) Low Crss typical @ 140pF (Typ.) Ordering Information Part No. Packag

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TSM60N06 60V N-Channel Power MOSFET TO-252 PRODUCT SUMMARY Pin Definition: (DPAK) 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 60 7.3 @ VGS =10V 66 Features Block Diagram Advanced Trench Technology Low RDS(ON) 7.3m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Packag

Datasheet: YPN438S , ASM6115 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , 4435 , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , CI47N65 , CI60N120SM .