TSM900N06CP Specs and Replacement

Type Designator: TSM900N06CP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO252

TSM900N06CP substitution

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TSM900N06CP datasheet

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TSM900N06CP

TSM900N06 60V N-Channel Power MOSFET TO-251S TO-252 Key Parameter Performance Pin Definition (IPAK SL) (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source VDS 60 V VGS = 10V 90 RDS(on) (max) m VGS = 4.5V 100 Qg 9.3 nC SOT-223 Block Diagram Ordering Information Part No. Package Packing TSM900N06CH X0G TO-251S 75pcs / Tube TSM900N06CP ROG TO-252... See More ⇒

Detailed specifications: GDSSF2300, TSM10NC60CF, TSM150P04LCS, TSM2301A, TSM240N03CX, TSM60NB1R4CH, TSM650P03CX, TSM900N06CH, AON6380, TSM900N06CW, CI28N120SM, CI30N120SM, CI47N65, CI60N120SM, CI72N65, CIM3N150, CIM6N120-220C

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs