All MOSFET. TSM900N06CW Datasheet

 

TSM900N06CW Datasheet and Replacement


   Type Designator: TSM900N06CW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 4.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT223
 

 TSM900N06CW substitution

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TSM900N06CW Datasheet (PDF)

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TSM900N06CW

TSM900N06 60V N-Channel Power MOSFET TO-251S TO-252 Key Parameter Performance Pin Definition: (IPAK SL) (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source VDS 60 V VGS = 10V 90 RDS(on) (max) m VGS = 4.5V 100 Qg 9.3 nC SOT-223 Block Diagram Ordering Information Part No. Package Packing TSM900N06CH X0G TO-251S 75pcs / Tube TSM900N06CP ROG TO-252

Datasheet: TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , AO4407 , CI28N120SM , CI30N120SM , CI47N65 , CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F .

History: IPI12CNE8NG | 2SK2461 | IXFP4N100Q | VMO1600-02P | AP09N70R | 2SJ196 | ATP213

Keywords - TSM900N06CW MOSFET datasheet

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