TSM900N06CW MOSFET. Datasheet pdf. Equivalent
Type Designator: TSM900N06CW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 4.17 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 9.3 nC
Rise Time (tr): 9.5 nS
Drain-Source Capacitance (Cd): 45 pF
Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm
Package: SOT223
TSM900N06CW Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TSM900N06CW Datasheet (PDF)
5.1. tsm900n06.pdf 
Size:502K _taiwansemi
TSM900N06 60V N-Channel Power MOSFET TO-251S TO-252 Key Parameter Performance Pin Definition: (IPAK SL) (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source VDS 60 V VGS = 10V 90 RDS(on) (max) m VGS = 4.5V 100 Qg 9.3 nC SOT-223 Block Diagram Ordering Information Part No. Package Packing TSM900N06CH X0G TO-251S 75pcs / Tube TSM900N06CP ROG TO-252
Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
