CI30N120SM Specs and Replacement
Type Designator: CI30N120SM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 91 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
Package: TO247
CI30N120SM substitution
CI30N120SM datasheet
ci30n120sm.pdf
1200V SiC N-Channel MOSFET CI30N120SM CI30N120SM Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Halogen Free, RoHS Compliant Benefits Higher System Efficiency (3) (1) (2) Reduced Cooling Requirements Increased Power Density TO-247-3 ... See More ⇒
Detailed specifications: TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , NCEP15T14 , CI47N65 , CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB .
Keywords - CI30N120SM MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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