All MOSFET. CI30N120SM Datasheet

 

CI30N120SM Datasheet and Replacement


   Type Designator: CI30N120SM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO247
 

 CI30N120SM substitution

   - MOSFET ⓘ Cross-Reference Search

 

CI30N120SM Datasheet (PDF)

 ..1. Size:587K  tokmas
 ci30n120sm.pdf pdf_icon

CI30N120SM

1200V SiC N-Channel MOSFETCI30N120SMCI30N120SMFeatures Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Halogen Free, RoHS CompliantBenefits Higher System Efficiency (3) (1) (2) Reduced Cooling Requirements Increased Power DensityTO-247-3

Datasheet: TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , AON6380 , CI47N65 , CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB .

History: AM4812

Keywords - CI30N120SM MOSFET datasheet

 CI30N120SM cross reference
 CI30N120SM equivalent finder
 CI30N120SM lookup
 CI30N120SM substitution
 CI30N120SM replacement

 

 
Back to Top

 


 
.