CI30N120SM PDF and Equivalents Search

 

CI30N120SM Specs and Replacement


   Type Designator: CI30N120SM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO247
 

 CI30N120SM substitution

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CI30N120SM datasheet

 ..1. Size:587K  tokmas
ci30n120sm.pdf pdf_icon

CI30N120SM

1200V SiC N-Channel MOSFET CI30N120SM CI30N120SM Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Halogen Free, RoHS Compliant Benefits Higher System Efficiency (3) (1) (2) Reduced Cooling Requirements Increased Power Density TO-247-3 ... See More ⇒

Detailed specifications: TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , NCEP15T14 , CI47N65 , CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB .

Keywords - CI30N120SM MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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