All MOSFET. CI30N120SM Datasheet


CI30N120SM MOSFET. Datasheet pdf. Equivalent

Type Designator: CI30N120SM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 102 nC

Rise Time (tr): 76 nS

Drain-Source Capacitance (Cd): 91 pF

Maximum Drain-Source On-State Resistance (Rds): 0.098 Ohm

Package: TO247

CI30N120SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CI30N120SM Datasheet (PDF)

0.1. ci30n120sm.pdf Size:587K _tokmas


1200V SiC N-Channel MOSFETCI30N120SMCI30N120SMFeatures Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Halogen Free, RoHS CompliantBenefits Higher System Efficiency (3) (1) (2) Reduced Cooling Requirements Increased Power DensityTO-247-3

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .


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