CIM6N120-220C MOSFET. Datasheet pdf. Equivalent
Type Designator: CIM6N120-220C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 1200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 233 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO-220C
CIM6N120-220C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CIM6N120-220C Datasheet (PDF)
6.1. cim6n120.pdf 
Size:226K _tokmas
36002dc8-79707dfb-44420c97-fd56264fPower MOSFETsCIM6N120Features Application 1200V, 6A Switch Mode Power Supply (SMPS) R =1.2 (Typ.) @ V = 10V, I =3A Uninterruptible Power Supply (UPS) DS(ON) GS D Fast Switching Power Factor Correction (PFC) 100% Avalanche Tested Improved dv/dt Capability Package Absolute Maximum Ratings (T =25 unless o
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