All MOSFET. CIM6N120-247 Datasheet

 

CIM6N120-247 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CIM6N120-247
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 233 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO247

 CIM6N120-247 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CIM6N120-247 Datasheet (PDF)

 6.1. Size:226K  tokmas
 cim6n120.pdf

CIM6N120-247 CIM6N120-247

36002dc8-79707dfb-44420c97-fd56264fPower MOSFETsCIM6N120Features Application 1200V, 6A Switch Mode Power Supply (SMPS) R =1.2 (Typ.) @ V = 10V, I =3A Uninterruptible Power Supply (UPS) DS(ON) GS D Fast Switching Power Factor Correction (PFC) 100% Avalanche Tested Improved dv/dt Capability Package Absolute Maximum Ratings (T =25 unless o

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