All MOSFET. CIM6N120-247 Datasheet


CIM6N120-247 MOSFET. Datasheet pdf. Equivalent

Type Designator: CIM6N120-247

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130.2 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 80 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 233 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO247

CIM6N120-247 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CIM6N120-247 Datasheet (PDF)

6.1. cim6n120.pdf Size:226K _tokmas


36002dc8-79707dfb-44420c97-fd56264fPower MOSFETsCIM6N120Features Application 1200V, 6A Switch Mode Power Supply (SMPS) R =1.2 (Typ.) @ V = 10V, I =3A Uninterruptible Power Supply (UPS) DS(ON) GS D Fast Switching Power Factor Correction (PFC) 100% Avalanche Tested Improved dv/dt Capability Package Absolute Maximum Ratings (T =25 unless o

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