IXFH60N60X2A MOSFET Datasheet: N-Ch, 600V, 60A. Full specification with pinout and replacement list

IXFH60N60X2A Specs and Replacement

Type Designator: IXFH60N60X2A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 780 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 3540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO247

IXFH60N60X2A substitution

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IXFH60N60X2A datasheet

..1. Size:157K ixys
ixfh60n60x2a.pdf pdf_icon

X2-Class HiPerFETTM VDSS = 600V IXFH60N60X2A Power MOSFET ID25 = 60A RDS(on) 52m AEC Q101 Qualified N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 600 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 600 V S = Source Ta... See More ⇒

..2. Size:302K inchange semiconductor
ixfh60n60x2a.pdf pdf_icon

isc N-Channel MOSFET Transistor IXFH60N60X2A FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.... See More ⇒

4.1. Size:166K ixys
ixfh60n60x ixfq60n60x.pdf pdf_icon

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFQ60N60X Power MOSFET ID25 = 60A IXFH60N60X RDS(on) 55m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXFQ) Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-247 (IXFH) VDGR TJ = 25 C to 150 C, RGS = 1... See More ⇒

4.2. Size:260K inchange semiconductor
ixfh60n60x.pdf pdf_icon

isc N-Channel MOSFET Transistor IXFH60N60X FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga... See More ⇒