All MOSFET. WMB128N10T2 Datasheet

 

WMB128N10T2 Datasheet and Replacement


   Type Designator: WMB128N10T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 126 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 128 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 934 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: PDFN5060-8L
 

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WMB128N10T2 Datasheet (PDF)

 ..1. Size:649K  way-on
 wmb128n10t2.pdf pdf_icon

WMB128N10T2

WMB128N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB128N10T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 128A DS DR

 9.1. Size:536K  way-on
 wmb129n10t2.pdf pdf_icon

WMB128N10T2

WMB129N10T2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB129N10T2 uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. sssssGsFeatures PDFN5060-8L V = 100 V, I = 129ASilicon Limited DS DR

 9.2. Size:620K  way-on
 wmb120p06ts.pdf pdf_icon

WMB128N10T2

WMB120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and GsssssGyet maintain superior switching performance. sFeatures PDFN5060-8L V = -60V, I = -120A DS DR

Datasheet: IXFH60N60X2A , MN7R6-60PS , STH80N10LF7-2AG , VP2320N1 , VIS30019 , VIS30023 , VIS30024 , VS3P07C , AON7403 , WML07N80M3 , WMM07N80M3 , WMO07N80M3 , WMP07N80M3 , WMK07N80M3 , WMN07N80M3 , WML26N60C4 , WMK26N60C4 .

History: FCD380N60E

Keywords - WMB128N10T2 MOSFET datasheet

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