TX50N06 PDF and Equivalents Search

 

TX50N06 Specs and Replacement

Type Designator: TX50N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.1 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO252

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TX50N06 datasheet

 ..1. Size:1312K  xds
 tx50n06.pdf pdf_icon

TX50N06

TX50N06 N channel 60V MOSFET Description Features The TX50N06 is the N-Channel logic enhancement VDS 60V mode power field effect transistors are produced using high cell RDS(on)Max. 20m density, DMOS trench technology.This high density process is ID especially tailored to minimize on-state resistance.These 50A devices are particularly suited for low voltage application. High... See More ⇒

Detailed specifications: WTM2302, WTM2305, WTM2306, WTM3400, WTM3401, WTM3415, TX15N10B, TX40N06B, IRF9540, XG65T125PS1B, XG65T230PS1B, XGP6508B, XGP6510B, YWNM6001, 2N7002AK, 2310, 3407

Keywords - TX50N06 MOSFET specs

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