All MOSFET. TX50N06 Datasheet

 

TX50N06 Datasheet and Replacement


   Type Designator: TX50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252
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TX50N06 Datasheet (PDF)

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TX50N06

TX50N06N channel 60V MOSFETDescription FeaturesThe TX50N06 is the N-Channel logic enhancementVDS60Vmode power field effect transistors are produced using high cellRDS(on)Max.20mdensity, DMOS trench technology.This high density process isIDespecially tailored to minimize on-state resistance.These50Adevices are particularly suited for low voltage application. High

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF9328 | NCE65N680I | GSM3015S | RUH1H138S | 2SK1495-Z | BSC066N06NS | 20N70KL-TF2-T

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