TX50N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: TX50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 158 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
TX50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TX50N06 Datasheet (PDF)
..1. Size:1312K xds
tx50n06.pdf
tx50n06.pdf
TX50N06N channel 60V MOSFETDescription FeaturesThe TX50N06 is the N-Channel logic enhancementVDS60Vmode power field effect transistors are produced using high cellRDS(on)Max.20mdensity, DMOS trench technology.This high density process isIDespecially tailored to minimize on-state resistance.These50Adevices are particularly suited for low voltage application. High
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