All MOSFET. TX50N06 Datasheet

 

TX50N06 Datasheet and Replacement


   Type Designator: TX50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252
 

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TX50N06 Datasheet (PDF)

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TX50N06

TX50N06N channel 60V MOSFETDescription FeaturesThe TX50N06 is the N-Channel logic enhancementVDS60Vmode power field effect transistors are produced using high cellRDS(on)Max.20mdensity, DMOS trench technology.This high density process isIDespecially tailored to minimize on-state resistance.These50Adevices are particularly suited for low voltage application. High

Datasheet: WTM2302 , WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B , K3569 , XG65T125PS1B , XG65T230PS1B , XGP6508B , XGP6510B , YWNM6001 , 2N7002AK , 2310 , 3407 .

History: NCE65N680I | LNG06R062 | IRLR3715ZC | PV6A4BA | SHD230409

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