All MOSFET. SPC20N65G Datasheet

 

SPC20N65G Datasheet and Replacement


   Type Designator: SPC20N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220F
 

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SPC20N65G Datasheet (PDF)

 ..1. Size:836K  cn sinai power
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SPC20N65G

SPC20N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=20A(Vgs=10V) R max. at 25oC () V =10V 0.40 DS(on) GS Ultra Low Gate Charge Q max. (nC) 95 g Improved dv/dt Capability Q (nC) 28 gs 100% Avalanche Tested Q (nC) 30 gd RoHS compliant Configuration single

Datasheet: SPA22N65G , SPA24N50G , SPA65R38G , SPA65R72G , SPC10N65G , SPC10N80G , SPC16N65G , SPC18N50G , 4N60 , SPC4N65G , SPC65R180G , SPB65R180G , SPC65R360G , SPE65R360G , SPD65R360G , SPC65R90G , SPC7N65G .

History: RU20E60L | STU10NM65N

Keywords - SPC20N65G MOSFET datasheet

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