All MOSFET. SPC4N65G Datasheet

 

SPC4N65G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPC4N65G
   Marking Code: 4N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO220F

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SPC4N65G Datasheet (PDF)

 ..1. Size:861K  cn sinai power
 spc4n65g.pdf

SPC4N65G SPC4N65G

SPC4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC () V =10V 2.4DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli

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