SPC4N65G PDF and Equivalents Search

 

SPC4N65G Specs and Replacement

Type Designator: SPC4N65G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO220F

SPC4N65G substitution

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SPC4N65G datasheet

 ..1. Size:861K  cn sinai power
 spc4n65g.pdf pdf_icon

SPC4N65G

SPC4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC ( ) V =10V 2.4 DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli... See More ⇒

Detailed specifications: SPA24N50G, SPA65R38G, SPA65R72G, SPC10N65G, SPC10N80G, SPC16N65G, SPC18N50G, SPC20N65G, 5N65, SPC65R180G, SPB65R180G, SPC65R360G, SPE65R360G, SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G

Keywords - SPC4N65G MOSFET specs

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