SPC4N65G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPC4N65G
Marking Code: 4N65G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 22.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 62 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO220F
SPC4N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPC4N65G Datasheet (PDF)
..1. Size:861K cn sinai power
spc4n65g.pdf
spc4n65g.pdf
SPC4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC () V =10V 2.4DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli
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